Typical GaN etch structureAlGaN/GaN Etching

AlGaN/GaN may be dry etched with either photoresist or hard mask using the following process types:

AlGaN/GaN RIE Etching

GaN mesa with hard mask still in placeAluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) Reactive Ion Etching (RIE)

AlGaN/GaN may be etched using the Reactive Ion Etching (RIE) process.

  PlasmaPro 100 RIE
Etch Rate: > 50nm/min
Single wafer size: up to 200mm
Batch size: up to 6x2"
Selectivity to PR: > 1:1
Uniformity: up to < ± 5%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

AlGaN/GaN ICP Etching

Hard masked GaN/AlGaN etching in the PlasmaPro 100 Cobra180Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) Inductively Coupled Plasma Etching (ICP)

AlGaN/GaN may be etched using the Inductively Coupled Plasma (ICP) Etching process.

Process specification

  PlasmaPro
100
PlasmaPro 1000
  Cobra180 Cobra300 Polaris Astrea
Mask: Photoresist Hard mask Photoresist Hard Mask Photoresist Photoresist
Etch Rate: >750nm/min (with clamping)

>1µm/min

>750nm/min (with clamping) >1µm/min >2µm/min <1 nm/min low damage >250nm/min
Single wafer size: up to 100mm (with clamping) up to 100mm Up to 150mm (with clamping) Up to 150mm Up to 150mm Up to 450mm
Batch size: up to 4 x 2” Up to 6 x 2” - Up to 55 x 2”, 14 x 100mm and 3 x 150mm
Selectivity to PR: > 1:1 - > 1:1 >1.5:1 >1.1:1
Uniformity: from < 3% - <5% < 3% < 5%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

Related Tools

PlasmaPro 100 RIE System

PlasmaPro 100 RIE System

Delivers anisotropic dry etching for an extensive range of processes

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 offers advanced plasma etch and deposition solutions on one platform with loadlock or cassette to cassette for RIE, ICP etch, ICP CVD and PECVD, upto 200mm single wafer platforms or multi-wafer batch capability.