Hard masked GaN/AlGaN etching in the PlasmaPro 100 Cobra180Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) Inductively Coupled Plasma Etching (ICP)

AlGaN/GaN may be etched using the Inductively Coupled Plasma (ICP) Etching process.

Process specification

PlasmaPro 1000
  Cobra180 Cobra300 Polaris Astrea
Mask: Photoresist Hard mask Photoresist Hard Mask Photoresist Photoresist
Etch Rate: >750nm/min (with clamping)


>750nm/min (with clamping) >1µm/min >2µm/min <1 nm/min low damage >250nm/min
Single wafer size: up to 100mm (with clamping) up to 100mm Up to 150mm (with clamping) Up to 150mm Up to 150mm Up to 450mm
Batch size: up to 4 x 2” Up to 6 x 2” - Up to 55 x 2”, 14 x 100mm and 3 x 150mm
Selectivity to PR: > 1:1 - > 1:1 >1.5:1 >1.1:1
Uniformity: from < 3% - <5% < 3% < 5%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.