GaN mesa with hard mask still in placeAluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) Reactive Ion Etching (RIE)

AlGaN/GaN may be etched using the Reactive Ion Etching (RIE) process.

  PlasmaPro 100 RIE
Etch Rate: > 50nm/min
Single wafer size: up to 200mm
Batch size: up to 6x2"
Selectivity to PR: > 1:1
Uniformity: up to < ± 5%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Dr Ziad Melhem of Oxford Instruments NanoScience will be giving a talk at MIT on the enabling technologies, require… https://t.co/MDz2SojzYv
5:21 PM - 16 Feb 18
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