GaN mesa with hard mask still in placeAluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) Reactive Ion Etching (RIE)

AlGaN/GaN may be etched using the Reactive Ion Etching (RIE) process.

  PlasmaPro 100 RIE
Etch Rate: > 50nm/min
Single wafer size: up to 200mm
Batch size: up to 6x2"
Selectivity to PR: > 1:1
Uniformity: up to < ± 5%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.