Ionfab300Calcium Fluoride (CaF2) Ion Beam Etching (IBE)

Process Specification

  Ionfab 300
Process gas: Ar
Typical etch rate [nm/min]:  25nm/min
Uniformity:   < 3
Selectivity to PR: ~ 1
Wafer size: up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

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Ionfab 300

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Offers the flexibility to perform etch and/or deposition and maximising system utilisation