Typical GaP lens etch structure, Photoresist as a maskGallium Phosphide (GaP) Lens Etching

GaP lens may be dry etched using Inductively Coupled Plasma (ICP) Etching with a photoresist mask.

Process Specification

  PlasmaPro 100 Cobra180
Etch Rate: > 1000nm/min
Selectivity to PR: ~ 3.5:1
Uniformity: < ± 5%
Wafer size: Up to 100mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.



Related Process Techniques



Plasma deposition of high quality dielectric films at low temperature with low damage.

Related Tools

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 offers advanced plasma etch and deposition solutions on one platform with loadlock or cassette to cassette for RIE, ICP etch, ICP CVD and PECVD, upto 200mm single wafer platforms or multi-wafer batch capability.

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