2mm deep GaAs slanted etch (PR still in place)Gallium Arsenide (GaAs) Reactive Ion Beam Etching (RIBE)

GaAs may be etched using the Reactive Ion Beam Etch (RIBE) process technique.

Process Features:

  • GaAs etch with rotation and adjustable tilt

Process Specification

Process gases:  Ar, Cl2
Typical etch rate: 100nm/min
Uniformity: < 3
Selectivity to SiO2: > 4
Wafer size: up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


Related Process Techniques

Ion Beam Etch (IBE)

Ion Beam Etch (IBE)

Ion beam technology that allows films to be etched or deposited by the use of beams of charged ions in a high vacuum system.

Related Tools

Ionfab 300

Ionfab 300

Offers the flexibility to perform etch and/or deposition and maximising system utilisation