Gallium Arsenide/Aluminium Gallium Arsenide (GaAs/AlGaAs) VCSEL EtchingGaAs VCSEL etching

GaAs/AlGaAs may be dry etched for VCSELs using the following process types:

 

GaAs/AlGaAs RIE

GaAs-AlGaAs VCSEL structure etched by RIE. Resist mask is still in placeGallium Arsenide/Aluminium Gallium Arsenide (GaAs/AlGaAs) Reactive Ion Etching

GaAs/AlGaAs may be etched using the Reactive Ion Etching (RIE) process.

  PlasmaPro 100 RIE
Etch rate: 50-150nm/min (dependant on batch size)
Single wafer size: up to 200mm
Batch size: up to 6 x 2"
Selectivity to PR: > 3:1
Selectivity to SiO2 or SiN: > 10:1
Uniformity: < ± 5 % (for 2 inch wafer, 5mm edge exclusion)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

 

GaAs/AlGaAs ICP Etch

Gallium Arsenide/Aluminium Gallium Arsenide Etching (GaAs/AlGaAs) ICP EtchingTypical GaAs/AlGaAs VCSEL structure

 

GaAs/AlGaAs may be etched using the Inductively Coupled Plasma (ICP) Etching process.

 

Process Specification

    Selective Etch
PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300 PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch Rate: from 200 - 1000nm/min 10 - 50nm/min
Single wafer size: up to 100mm up to 150mm
Selectivity: to SiO2 or SiN: > 10:1 Selectivity to AlGaAs: > 50:1
Selectivity to PR: > 3:1 > 1:1
Uniformity*: < ±5%

*7mm excl zone

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

 

Related Tools

PlasmaPro 100 RIE System

PlasmaPro 100 RIE System

Delivers anisotropic dry etching for an extensive range of processes

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 offers advanced plasma etch and deposition solutions on one platform with loadlock or cassette to cassette for RIE, ICP etch, ICP CVD and PECVD, upto 200mm single wafer platforms or multi-wafer batch capability.

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