Gallium Arsenide/Aluminium Gallium Arsenide Etching (GaAs/AlGaAs) ICP EtchingTypical GaAs/AlGaAs VCSEL structure


GaAs/AlGaAs may be etched using the Inductively Coupled Plasma (ICP) Etching process.


Process Specification

    Selective Etch
PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300 PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch Rate: from 200 - 1000nm/min 10 - 50nm/min
Single wafer size: up to 100mm up to 150mm
Selectivity: to SiO2 or SiN: > 10:1 Selectivity to AlGaAs: > 50:1
Selectivity to PR: > 3:1 > 1:1
Uniformity*: < ±5%

*7mm excl zone

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.



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