GaAs-AlGaAs VCSEL structure etched by RIE. Resist mask is still in placeGallium Arsenide/Aluminium Gallium Arsenide (GaAs/AlGaAs) Reactive Ion Etching

GaAs/AlGaAs may be etched using the Reactive Ion Etching (RIE) process.

  PlasmaPro 100 RIE
Etch rate: 50-150nm/min (dependant on batch size)
Single wafer size: up to 200mm
Batch size: up to 6 x 2"
Selectivity to PR: > 3:1
Selectivity to SiO2 or SiN: > 10:1
Uniformity: < ± 5 % (for 2 inch wafer, 5mm edge exclusion)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.