Typical GaN etch structureGallium Nitride (GaN) Etching

GaN may be dry etched using the following process types:

Gallium Nitride (GaN) ICP Etch

GaN mesa with hard mask still in placeGallium Nitride (GaN) ICP Etching

GaN may be etched using the Inductively Coupled Plasma (ICP) Etching process.

  PlasmaPro 100 PlasmaPro 1000
Cobra180 Cobra300 Polaris  Astrea
Single Wafer Etch Rate: > 500nm/min > 2µm/min -
Batch Etch Rate: > 100nm/min - > 250nm/min
Single wafer size: up to 100mm up to 200mm -
Batch size: up to 4 x 2" - up to 55 x 2" and 14 x 100mm
Selectivity to PR: > 2:1 > 1:1
Uniformity: < ± 3%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

 

Gallium Nitride (GaN) RIE Etch

8µm deep GaN RIE etchGallium Nitride (GaN) Reactive Ion Etch (RIE)

GaN may be etched using the Reactive Ion Etching (RIE) process.

Process Specification

  PlasmaPro 100 RIE
Etch Rate: > 0.5 - 1µm/min
Single wafer size: Up to 200mm
Batch size: Up to 6 x 2"
Selectivity to PR: > 1:1
Selectivity to SiO2: > 10:1
Uniformity: Up to < ± 3%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

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