8µm deep GaN RIE etchGallium Nitride (GaN) Reactive Ion Etch (RIE)

GaN may be etched using the Reactive Ion Etching (RIE) process.

Process Specification

  PlasmaPro 100 RIE
Etch Rate: > 0.5 - 1µm/min
Single wafer size: Up to 200mm
Batch size: Up to 6 x 2"
Selectivity to PR: > 1:1
Selectivity to SiO2: > 10:1
Uniformity: Up to < ± 3%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


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