GaN mesa with hard mask still in placeGallium Nitride (GaN) ICP Etching

GaN may be etched using the Inductively Coupled Plasma (ICP) Etching process.

  PlasmaPro 100 PlasmaPro 1000
Cobra180 Cobra300 Polaris  Astrea
Single Wafer Etch Rate: > 500nm/min > 2µm/min -
Batch Etch Rate: > 100nm/min - > 250nm/min
Single wafer size: up to 100mm up to 200mm -
Batch size: up to 4 x 2" - up to 55 x 2" and 14 x 100mm
Selectivity to PR: > 2:1 > 1:1
Uniformity: < ± 3%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.