25µm deep GaP/ InGaAlP/ GaAs etch at ca 2 µm/minGallium Phosphide (GaP) ICP Etching

GaP may be dry etched using the Inductively Coupled Plasma (ICP) process.

Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: 0.3 -2 µm/ min
Selectivity to SiO2 mask: ~ 10 : 1
Uniformity: < ± 5% < ± 4%
Wafer size: Up to 100mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


Related Process Techniques

Related Tools

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 offers advanced plasma etch and deposition solutions on one platform with loadlock or cassette to cassette for RIE, ICP etch, ICP CVD and PECVD, upto 200mm single wafer platforms or multi-wafer batch capability.