Indium Phosphide/Indium Gallium Arsenide/Indium Aluminium Arsenide (InP/InGaAs/InAlAs) Etch

InP/InGaAs/InAlAs may be dry etched using the following process types:

Indium Phosphide (InP) Reactive Ion Etching (RIE)

3x3” batch InP wafer etched using ICP CH4/H2 process with Photo resist maskIndium Phosphide (InP) Reactive Ion Etch (RIE)

InP may be dry etched using the Reactive Ion Etching (RIE) process technique

Process Specification

         

  PlasmaPro 80 RIE PlasmaPro 100 RIE
Etch Rate: > 15nm/min
Single wafer size: Up to 100mm
Batch size: Up to 6x2"
Selectivity to PR: > 10:1
Uniformity: Up to < ± 5%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

Indium Phosphide (InP) ICP Etch

Indium Phosphide (InP) 3x3” batch InP wafer etched using ICP CH4/H2 process with Photo resist maskbased materials using ICP Etch

InP may be dry etched using the Inductively Coupled Plasma (ICP) process technique

Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch Rate: 50nm/min - 1.5 µm/min
Single wafer size: up to 100mm
Batch size: Up to 4 x 2”
Selectivity to SiO2 or SiN: > 10:1
Uniformity: < ± 5% < ± 4%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

Indium Phosphide (InP) Reactive Ion Beam Etch (RIBE)

Anisotropic InP RIBEIndium Phosphide (InP) Reactive Ion Beam Etch (RIBE)

Process Features

  • Chlorine and CH4/H2 based process
  • CAIBE or RIBE possible with RF sources

Process Specification

  Ionfab 300
Typical etch rate: 110nm/min
Uniformity [±%]: < 3
Selectivity to SiO2: > 5
Wafer size: up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

Related Process Techniques

Ion Beam Etch (IBE)

Ion Beam Etch (IBE)

Ion beam technology that allows films to be etched or deposited by the use of beams of charged ions in a high vacuum system.

Related Tools

PlasmaPro 100 RIE System

PlasmaPro 100 RIE System

Delivers anisotropic dry etching for an extensive range of processes

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 offers advanced plasma etch and deposition solutions on one platform with loadlock or cassette to cassette for RIE, ICP etch, ICP CVD and PECVD, upto 200mm single wafer platforms or multi-wafer batch capability.