Anisotropic InP RIBEIndium Phosphide (InP) Reactive Ion Beam Etch (RIBE)

Process Features

  • Chlorine and CH4/H2 based process
  • CAIBE or RIBE possible with RF sources

Process Specification

  Ionfab 300
Typical etch rate: 110nm/min
Uniformity [±%]: < 3
Selectivity to SiO2: > 5
Wafer size: up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.