3x3” batch InP wafer etched using ICP CH4/H2 process with Photo resist maskIndium Phosphide (InP) Reactive Ion Etch (RIE)

InP may be dry etched using the Reactive Ion Etching (RIE) process technique

Process Specification


  PlasmaPro 80 RIE PlasmaPro 100 RIE
Etch Rate: > 15nm/min
Single wafer size: Up to 100mm
Batch size: Up to 6x2"
Selectivity to PR: > 10:1
Uniformity: Up to < ± 5%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.