Typical SiC etch profileSmooth Anisotropic Silicon Carbide (SiC) ICP Etching

Process specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Polaris
  Feature etch Via etch Feature etch Via etch
Etch Rate (µm/min) > 0.3 > 0.7 > 1.2
Etch Depth (µm) > 1 Up to 100 > 1 Up to 200
Uniformity  +/-% < 5 < 3
Selectivity to Al 7 7 > 5:1
Selectivity to Ni - > 20:1 > 20:1  > 25:1
Selectivity to SiO2 - - > 8:1 c.2:1
Wafer size Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Silicon Carbide (SiC) RIE

Silicon Carbide (SiC) RIE etching

  PlasmaPro 80 RIE PlasmaPro 100 RIE PlasmaPro 800 RIE
Etch rate: > 30nm/min
Uniformity: < ± 4 %
Selectivity to PR: > 0.5:1
Wafer size: up to 200mm up to 300mm
Batch size:

up to: 14 x 2", 5 x 3", 3 x 4"

up to: 43 x 2", 21 x 3", 12 x 100mm, 5 x 150mm, 2 x 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

Related Tools

PlasmaPro 100 Polaris

PlasmaPro 100 Polaris

Delivers fast etch rates uniformly on single wafers up to 200mm diameter