Silicon Carbide (SiC) RIE etching

  PlasmaPro 80 RIE PlasmaPro 100 RIE PlasmaPro 800 RIE
Etch rate: > 30nm/min
Uniformity: < ± 4 %
Selectivity to PR: > 0.5:1
Wafer size: up to 200mm up to 300mm
Batch size:

up to: 14 x 2", 5 x 3", 3 x 4"

up to: 43 x 2", 21 x 3", 12 x 100mm, 5 x 150mm, 2 x 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.