Si3N4 Ion Beam Etching (IBE)

Process Specification 

Recommended Etch Gases: CHF3-O2-CF4
Recommended Plasma Clean Gases: O2
Wafer size Up to 200mm
Parameter/Process Si3N4 etch
Diameter etched 200 mm
Mask PR or SiO2
Gas chemistry Ar
Typical etch rate [nm/min] 45nm/min
Uniformity [±%]3 <3
Reproducibility [±%] <3
Selectivity to mask ~1

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.