2.2µm SiNx (PR mask still in place)Silicon Nitride (SiNx) etching

Process Specification

  • Recommended Etch Gases:  CHF3-O2-CF4
  • Recommended Plasma Clean Gases: O2
  PlasmaPro 80 RIE PlasmaPro 800 RIE
Wafer size Up to 200mm wafers Batch sizes: up to 43x2", 20x3", 12x100mm, 7x125mm, 5x150mm, 2x200mm or 1x300mm
Etch rate > 50nm/min
Selectivity to PR > 1.5:1
Uniformity within wafer <  ± 5% (5mm edge exclusion 2”, 3”, 7mm 100mm & larger) <  ± 4% (5mm edge exclusion 2”, 3”, 7mm 100mm &larger)
Reproducibility < ± 3% (run to run)
Profile control < 85°

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.