100 nm lines and dots. Image courtesy of University of Linz Institut für Halbleiterphysik Zinc Selenide (ZnSe) Etch

Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch Rate: > 20nm/min
Selectivity to PR: > 2:1
Wafer size: Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.



Related Process Techniques

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PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 offers advanced plasma etch and deposition solutions on one platform with loadlock or cassette to cassette for RIE, ICP etch, ICP CVD and PECVD, upto 200mm single wafer platforms or multi-wafer batch capability.