Aluminium Oxide (Al2O3) Ion Beam Etch (IBE)

Al2O3 may be etched using the Reactive Ion Beam Etch (RIBE) process technique.

Process features

  • Process gases: Ar, CHF3, O2
  • Al2O3 etch with rotation and adjustable tilt

Process specification

Typical etch rate [nm/min]: 10nm/min
Uniformity: < 3
Selectivity to PR: > 1
Wafer size: up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.