20µm Bi2Te3 Etched by ICP - RIE with kind permission of Infineon Technologies AG, Fraunhofer - IPM FreiburgBismuth Telluride (Bi2Te3) Etching

Bi2Te3 has applications in Peltier coolers and in energy harvesting (the conversion of temperature differences into electrical energy). Bi2Te3 and related films may be dry etched using the Inductively Coupled Plasma (ICP) Etch process technique.

  PlasmaPro 100 Cobra65 PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: > 20 µm/hr
Uniformity: ± 4 % ± 5 %
Selectivity to PR: > 1:1
Wafer size: Up to 2" Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.