GST depth 0.2µm. Profile 74°Germanium Antimony Telluride (GST) Etching

GST (full chemical formula Ge2Sb2Te5) is used as a phase shift memory material. GST and related films may be dry etched with a chlorinated gas based process in the following Inductively Coupled Plasma (ICP) Etch process technique.


  PlasmaPro 100 Cobra65 PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: 150nm/min
Uniformity: <±5% across 2" wafer <±5% across 100mm wafer <±5% across 200mm wafer
Selectivity to PR: >2:1
Selectivity to SiO2: >3:1
Wafer size: Up to 2" Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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