Germanium Antimony Telluride (GST) Etching
GST (full chemical formula Ge2Sb2Te5) is used as a phase shift memory material. GST and related films may be dry etched with a chlorinated gas based process in the following Inductively Coupled Plasma (ICP) Etch process technique.
These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.