Dry ICP LiNbO3 etch with smooth sidewallLithium Niobate (LiNbO3) Dry ICP Etching in the PlasmaPro 100 Cobra

LiNbO3 and related films may be dry etched smoothly using ICP process chambers.

Process specification:

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300 PlasmaPro 100 Polaris
Etch rate: > 50nm/min > 100nm/min
Uniformity: < ± 5 %    
Selectivity to Cr: > 5:1    
Selectivity to PR: > 1:1 >0.6:1(HSQ)
Wafer size: Up to 100mm Up to 200mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.



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