Typical SiC features etched with the metal masked ICP etch processSmooth anisotropic Silicon Carbide (SiC) ICP Etching

Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Polaris
Etch rate: >300nm/min >1µm/min
Uniformity: < ± 5 %
Selectivity to Al: > 7:1 > 25:1
Selectivity to Ni: - > 35:1
Wafer size: Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.



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