SiO2 etching can be achieved by RIE, Ion beam or RIE-ICP. RIE offers the simplest solution but RIE-ICP gives the highest etch rates, selectivity to mask and profile control

Metal or PR masked SiO2 ICP Etching

Silicon Oxide etching requires several factors in order to achieve high rate, high selectivity and vertical profile:

  • High density plasma
  • Excellent temperature control of the wafer
  • Controlled chamber environment to extend MTBC and increase selectivity

The PlasmaPro 100 Polaris brings together unique Electrostatic Clamp (ESC) technology along with our well established Cobra300 ICP source. This delivers excellent repeatability while maintaining high etch rate and profile quality.

Process results

  • Etch Gases:  C4F8, O2 or H2
  • Plasma Clean Gases:  O2, SF6
  PlasmaPro 100
  ICP Cobra180 ICP Cobra300 Polaris
  PR
masked
Metal
masked
Lens
Etch
PR
masked
Metal
masked
Lens
Etch
PR masked
Etch rate (nm/min) > 150 > 250 20-30 > 150 > 250 20-30 500
Selectivitiy  Over PR: > 1.5:1 Over PR: > 1:1
Over Al, Cr: > 50:1
Over PR:
> 0.5 to 1.5:1 controllable
Over PR: > 1.5:1 Over PR: > 1:1
Over Al, Cr: > 50:1
Over PR:
> 0.5 to 1.5:1 controllable
> 5:1
Uniformity < ±5% < ±3%
Reproducability < ±3% (run to run)

Process features

  • The process offers smooth anisotropic high aspect ratio SiO2 etching from 50nm to >50µm depths

For a detailed process specification please contact your sales representative.

Silicon dioxide (SiO2) RIE

SiO2 etching in the PlasmaPro 80 RIE and PlasmaPro 800 RIE

  • Recommended Etch Gases: CHF3-Ar
  • Recommended Plasma Clean Gases: O2
  PlasmaPro 80 RIE PlasmaPro 800 RIE
Etch rate (nm/min) > 30 > 25
Selectivitiy Over PR: > 3:1
Over Si: >8:1
Uniformity <  ± 4% (5mm edge exclusion 2”, 3”, 7mm 100mm and larger) <  ± 3% (5mm edge exclusion 2”, 3”,
7mm 100mm and larger)
Reproducability < ± 3% (run to run)
Wafer size Up to 200mm
Batch size   up to 43x2", 20x3", 12x100mm, 7x125mm, 5x150mm, 2x200mm or 1x300mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

Silicon dioxide (SiO2) Ion Beam Etching

5 µm deep anisotropic quartz RIBE. Courtesy of Uni JenaSiO2 IBE/RIBE

Process Specification

  • Process gases: Ar, CHF3, O2
  • Up to 200mm wafer size
  Ionfab 300
Etch rate (nm/min) 30
Selectivitiy > 5
Uniformity < ± 3%
Reproducability < ±3%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

 

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