5 µm deep anisotropic quartz RIBE. Courtesy of Uni JenaSiO2 IBE/RIBE

Process Specification

  • Process gases: Ar, CHF3, O2
  • Up to 200mm wafer size
  Ionfab 300
Etch rate (nm/min) 30
Selectivitiy > 5
Uniformity < ± 3%
Reproducability < ±3%

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.