SiO2 etching in the PlasmaPro 80 RIE and PlasmaPro 800 RIE

  • Recommended Etch Gases: CHF3-Ar
  • Recommended Plasma Clean Gases: O2
  PlasmaPro 80 RIE PlasmaPro 800 RIE
Etch rate (nm/min) > 30 > 25
Selectivitiy Over PR: > 3:1
Over Si: >8:1
Uniformity <  ± 4% (5mm edge exclusion 2”, 3”, 7mm 100mm and larger) <  ± 3% (5mm edge exclusion 2”, 3”,
7mm 100mm and larger)
Reproducability < ± 3% (run to run)
Wafer size Up to 200mm
Batch size   up to 43x2", 20x3", 12x100mm, 7x125mm, 5x150mm, 2x200mm or 1x300mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.