Photonic crystal holes etched in Ta2O5 using ZEP520 maskTantalum Pentoxide (Ta2O5) ICP Etching

Ta2O5 may be dry etched using the Inductively Coupled Plasma (ICP) process technique. Process features include; fluorinated gas based processes and RIE-biased and temperature-controlled wafer electrode.

Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: >80nm/min
Uniformity: < ± 5 %
Selectivity to PR: > 1:1
Selectivity to Cr: > 8:1
Wafer size: Up to 100mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

 

 

Related Process Techniques

Inductively Coupled Plasma (ICP) Etch

Inductively Coupled Plasma (ICP) Etch

Inductively Coupled Plasma (ICP) Etching

Related Tools

PlasmaPro 100 Cobra ICP Etch Systems

PlasmaPro 100 Cobra ICP Etch Systems

Produces a high density of reactive species at low pressure

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