Photonic crystal holes etched in Ta2O5 using ZEP520 maskTantalum Pentoxide (Ta2O5) ICP Etching

Ta2O5 may be dry etched using the Inductively Coupled Plasma (ICP) process technique. Process features include; fluorinated gas based processes and RIE-biased and temperature-controlled wafer electrode.

Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: >80nm/min
Uniformity: < ± 5 %
Selectivity to PR: > 1:1
Selectivity to Cr: > 8:1
Wafer size: Up to 100mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.



Related Process Techniques

Related Tools

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 Cobra ICP Etch

PlasmaPro 100 offers advanced plasma etch and deposition solutions on one platform with loadlock or cassette to cassette for RIE, ICP etch, ICP CVD and PECVD, upto 200mm single wafer platforms or multi-wafer batch capability.