Copper (Cu) ICP Etching for Failure Analysis (FA)

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: >100nm/min
Uniformity: < ± 6 %
Selectivity to SiO2: > 4:1
Wafer size: Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.