Reactive Ion Etch (RIE) for Failure Analysis

Process Specification

  Polyimide Depassivation  (SiNx) SiOx (BPSG; TEOS)
  PlasmaPro FA200 (PlasmaPro 80) PlasmaPro FA300 (PlasmaPro 800) PlasmaPro FA200 (PlasmaPro 80) PlasmaPro FA300 (PlasmaPro 800) PlasmaPro FA200 (PlasmaPro 80) PlasmaPro FA300 (PlasmaPro 800)
Mode RIE PE RIE
Etch Rate (Å/min) >1000 >700 >1000 >350
Selectivity To SiNx  >15:1 To SiOx >7:1 To SiNx  >15:1 To Poly-Si >7:1
Uniformity ± 6% (200mm wafer) ± 5% (300mm wafer) ± 7% (200mm wafer) ± 5% (300mm wafer) ± 5% (200mm wafer) ± 5% (300mm wafer)

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.