Anisotropic Al etch with resist intactAluminium (Al) ICP Etching

Al and related films may be dry etched smoothly using ICP process chambers.

  PlasmaPro 80 Cobra65 or
PlasmaPro 100 Cobra65
PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300 PlasmaPro 100 Polaris
Etch rate: >300nm/min
Uniformity: < ± 5 % < ± 3 %
Selectivity to PR: > 2:1 > 2.5:1
Selectivity to SiO2: > 5:1
Wafer size: Up to 2" Up to 100mm Up to 200mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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