Ti/Au/Ti stack cleared down to SiO2 substrate. SiO2 mask intact. Clean substrateGold (Au) Etching

The Cl2, Ar, O2 at high temperature satisfies the need to form volatile etch by smooth, clean etch results. Au may be dry etched using the following process types:


 

Gold (Au) ICP Etching

Ti/Au/Ti stack cleared down to SiO2 substrate. SiO2 mask intact. Clean substrateHot Chemical Gold (Au) ICP Etching

Au may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: >100nm/min
Uniformity: < ± 5 %
Selectivity to SiO2: > 2:1
Selectivity to Ti: Controllable 1:1 to > 5:1
Wafer size: Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Gold (Au) Ion Beam Etching

4.5 µm deep etch with 50 deg wall angle (photo resist mask still in place)Gold (Au) Ion Beam Etching (IBE)

Au may be etched using our Ion Beam Etch process.

Process Specification

  Ionfab 300
Typical etch rate: 50nm/min
Uniformity: < 3
Selectivity to PR: ~ 1
Wafer size: up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Related Process Techniques

Ion Beam Etch (IBE)

Ion Beam Etch (IBE)

Ion beam technology that allows films to be etched or deposited by the use of beams of charged ions in a high vacuum system.