4.5 µm deep etch with 50 deg wall angle (photo resist mask still in place)Gold (Au) Ion Beam Etching (IBE)

Au may be etched using our Ion Beam Etch process.

Process Specification

  Ionfab 300
Typical etch rate: 50nm/min
Uniformity: < 3
Selectivity to PR: ~ 1
Wafer size: up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Dr Ziad Melhem of Oxford Instruments NanoScience will be giving a talk at MIT on the enabling technologies, require… https://t.co/MDz2SojzYv
5:21 PM - 16 Feb 18
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