Ti/Au/Ti stack cleared down to SiO2 substrate. SiO2 mask intact. Clean substrateHot Chemical Gold (Au) ICP Etching

Au may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: >100nm/min
Uniformity: < ± 5 %
Selectivity to SiO2: > 2:1
Selectivity to Ti: Controllable 1:1 to > 5:1
Wafer size: Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.