Deep CMT etch (PR still in place)Cadnium/Mercury/Telluride (CMT) Ion Beam Etching (IBE)

Process Specification

  • Process gas: Ar
  • Up to 200mm wafer size
  Ionfab 300
Parameter/Process CaF2 etch
Diameter etched 200 mm
Mask PR
Gas chemistry Ar
Typical etch rate [nm/min] 25nm/min
Uniformity [±%] < 3
Reproducibility [±%] < 3
Selectivity to mask ~ 1

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.