CMT (CdHgTe) ICP etching CMT etching

  PlasmaPro 100 Cobra180
Recommended Etch Gases CH4, Ar, H2, N2
Recommended Plasma Clean Gases O2, SF6
Etch rate 5 to 500nm/min
Wafer size up to 100mm
Selectivity to Oxide > 20:1
Selectivity to PR > 10:1
Uniformity < ± 5 % (up to 100mm wafer, 7mm excl zone)
Reproducibility < ± 5% (run to run)
Profile control >   90° ± 5° controllable

Typical CMT Mesa Etch structure, Oxide as a maskThese results are for indicative purposes only.
For a detailed process specification please contact your sales representative.