Cobalt (Co) Ion Beam Etching (IBE)

Process Specification

  Ionfab 300
Process gas Ar
Typical etch rate [nm/min] 5nm/min
Uniformity3 < 3
Selectivity to PR > 1
Wafer size up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.