100nm Cr layer etched down to quartz substrate using Cobra sourceChromium (Cr) ICP Etching

Cr and related films may be dry etched smoothly using ICP process chambers.

Process specification:

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300 PlasmaPro 1000 Astrea
Etch rate: > 50nm/min > 10nm/min
Uniformity: < ± 5% < ± 3%
Selectivity to SiO2: > 50:1 High
Selectivity to PR: > 0.5:1 > 0.3:1
Wafer size: Up to 100mm Up to 200mm Up to 450mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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