SEM image shows residue free Copper etchCopper (Cu) Ion Beam Etching (IBE)

Process Specification

  Ionfab 300
Process gas Ar
Typical etch rate [nm/min] 20nm/min
Uniformity < 3
Selectivity to PR ~ 1
Wafer size up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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