Niobium (Nb) ICP Etching  

Nb may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

  PlasmaPro 80 Cobra65 or PlasmaPro 100 Cobra65
Etch rate: 150 nm/min with PR mask
Uniformity: < ± 3 %
Selectivity to SiO2: > 10:1
Wafer size: Up to 2"

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.