Nickel (Ni) Etching

Ni may be dry etched using the following process types:

Nickel (Ni) ICP Etching

SEM image shows redeposition-free ICP Nickel Etch, 0.5µm deep, PR removedNickel (Ni) ICP Etching

Ni may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

Process Specification

  PlasmaPro 100 Cobra65 PlasmaPro 100  Cobra180
Etch rate: > 30nm/min
Uniformity: < ± 5 %
Selectivity to PR: > 0.3:1
Wafer size: Up to 2” wafers Up to 100mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


Nickle (Ni) Ion Beam Etching

0.3µm deep Ni etch, PR mask not removedNickel (Ni) Ion Beam Etching (IBE)

Ni may be etched using the Ion Beam Etch process.

Process specification

1. Ni etch with rotation and adjustable tilt.

  Ionfab 300
Typical etch rate [nm/min]:    20nm/min
Uniformity3: < ±3%
Reproducibility: < 3
Selectivity to mask: 0.81


  1. Some variation in etch rate, selectivity and profile may be observed between wide features and narrow features
  2. Minimum mask thickness required is (1.2 x Etch depth)/Selectivity
  3. With 5mm edge exclusion

Related Process Techniques

Ion Beam Etch (IBE)

Ion Beam Etch (IBE)

Ion beam technology that allows films to be etched or deposited by the use of beams of charged ions in a high vacuum system.