SEM image shows redeposition-free ICP Nickel Etch, 0.5µm deep, PR removedNickel (Ni) ICP Etching

Ni may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

Process Specification

  PlasmaPro 100 Cobra65 PlasmaPro 100  Cobra180
Etch rate: > 30nm/min
Uniformity: < ± 5 %
Selectivity to PR: > 0.3:1
Wafer size: Up to 2” wafers Up to 100mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.


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