0.3µm deep Ni etch, PR mask not removedNickel (Ni) Ion Beam Etching (IBE)

Ni may be etched using the Ion Beam Etch process.

Process specification

1. Ni etch with rotation and adjustable tilt.

  Ionfab 300
Typical etch rate [nm/min]:    20nm/min
Uniformity3: < ±3%
Reproducibility: < 3
Selectivity to mask: 0.81


  1. Some variation in etch rate, selectivity and profile may be observed between wide features and narrow features
  2. Minimum mask thickness required is (1.2 x Etch depth)/Selectivity
  3. With 5mm edge exclusion
Watch our latest webinar On Demand to find out ‘How Ion Beam Deposition enables high power lasers’… https://t.co/0z7DkZh0LQ
11:45 AM - 23 Mar 18
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