Ionfab300Nickel Iron (NiFe) Ion Beam Etching (IBE)

Process Specification

Ag etch with rotation and adjustable tilt

  Ionfab 300
Process gas: Ar
Parameter/Process: NiFe etch
Diameter etched: 200 mm
Mask: SiO2
Gas chemistry: Ar
Wafer size up to 200mm
Typical etch rate [nm/min]: 20nm/min
Uniformity [±%]3: < 3
Reproducibility [±%]: < 3
Selectivity to mask: < 1

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

Related Process Techniques

Ion Beam Deposition (IBD)

Ion Beam Deposition (IBD)

Ion beam technology that allows films to be etched or deposited by the use of beams of charged ions in a high vacuum system.

Ion Beam Etch (IBE)

Ion Beam Etch (IBE)

Ion beam technology that allows films to be etched or deposited by the use of beams of charged ions in a high vacuum system.

Related Tools

Ionfab 300

Ionfab 300

Offers the flexibility to perform etch and/or deposition and maximising system utilisation