Lead (Pb) Ion Beam Etching (IBE)

Process Specification

  Ionfab 300
Process gas: Ar
Typical etch rate [nm/min]:  20nm/min
Uniformity3:   < 3
Selectivity to PR: > 1
Wafer size: up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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