SEM image shows 2mm deep Pt etch (PR still in place)Platinum (Pt) Ion Beam Etching (IBE)

Pt may be etched using the Ion Beam Etching process.

Process specification

1. Pt etch with rotation and adjustable tilt.

  Ionfab 300
Typical etch rate: 30nm/min
Uniformity:3 < ± 3%
Selectivity to mask:  > 1
Wafer size: Up to 200mm

Notes:

  1. Some variation in etch rate, selectivity and profile may be observed between wide features and narrow features
  2. Minimum mask thickness required is (1.2 x Etch depth)/Selectivity
  3. With 5mm edge exclusion

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.