1µm deep Tantalum Etch etchingTantalum (Ta) ICP Etch

Application as an X-ray mask absorber on a SiN or SiC membrane

Process Specification

  PlasmaPro 100 Cobra180 PlasmaPro 100 Cobra300
Etch rate: > 60 nm/ min Contact us for data
Selectivity to Al2O3: > 16 :1 Contact us for data
Uniformity: < ± 4 % Contact us for data
Wafer size: Up to 100mm Up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.