Tantalum Nitride (TaN) Ion Beam Etch

Process Specification

  Ionfab 300
Process gas Ar
Typical etch rate [nm/min] > 15nm/min
Uniformity < 3
Selectivity to PR ~ 0.71 - 0.51
Wafer size up to 200mm

These results are for indicative purposes only.
For a detailed process specification please contact your sales representative.

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